Electrical and optical switching properties of single crystal bi4ti3oi2

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Abstract
The full and partial switching properties of twin free Bi4Ti3O12 crystals have been studied by a combination of c-axis electrical switching measurements and optical observations of the domain patterns in the ab and ac planes. No absolute switching threshold could be detected for Bi4Ti3O12. However a sharp increase in the activation field was measured at low E. The large self reversal effects, the dependence of switching speed on 'off time and the close approach to a threshold are due to the lock-in of the reversing domain walls at energy traps. The polarization reversal occurs with a small number of domains whose sides are parallel to and extend the full length of the c-axis. Initially the domains have a lenticular ab cross-section with most of the growth occurring along the lenticle's long axis which is parallel to the crystal's b-axis. As the domains coalesce a-axis growth becomes dominant.