On the Static Characteristics of High-Low Junction Devices†
- 1 July 1962
- journal article
- research article
- Published by Taylor & Francis in Journal of Electronics and Control
- Vol. 13 (1) , 23-34
- https://doi.org/10.1080/00207216208937418
Abstract
This paper presents the static analysis of the RvNR structure and shows that gross deviations from the expected ‘ ohmie ’ behaviour are present. The analysis proceeds by assuming the total current density is a known, solenoidal vector. From this and the necessary boundary conditions, the excess carrier concentrations and the terminal voltage are calculated. Experimental results are given, and are found to be in excellent agreement with the theory.Keywords
This publication has 4 references indexed in Scilit:
- On Carrier Accumulation, and the Properties of Certain Semiconductor Junctions†Journal of Electronics and Control, 1958
- Durchlaß- und Sperreigenschaften eines p-i-Metall-GleichrichtersZeitschrift für Naturforschung A, 1956
- Carrier Concentration Disturbances in SemiconductorsProceedings of the Physical Society. Section B, 1955
- Scattering of 14.3 MeV Neutrons by4He NucleiProceedings of the Physical Society. Section A, 1955