New high-speed bipolar XOR gate with absolutely symmetrical circuit configuration
- 29 March 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (7) , 430-431
- https://doi.org/10.1049/el:19900279
Abstract
A new monolithic integrated exclusive OR gate (XOR) in E2CL circuit design is presented. The symmetry with respect to both inputs makes it superior to the standard XOR gates in ECL or E2CL for several applications. The circuit was realised using a conservative 2 μm standard silicon bipolar technology.Keywords
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