The deposition of thin films of CuME2 by CVD techniques (M = In, Ga and E = S, Se)
- 25 June 2003
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry
- Vol. 13 (8) , 1942-1949
- https://doi.org/10.1039/b302896h
Abstract
Thin film(s) of chalcopyrite CuME2 (where M = In or Ga; E = S or Se) have been grown by low-pressure metal-organic chemical vapour deposition (LP-MOCVD) or aerosol-assisted chemical vapour deposition (AACVD) using the precursors M(E2CNMenHex)3 and Cu(E2CNMenHex)2. Films were grown on various substrates between 350–500 °C and characterized by X-ray diffraction, XPS, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.Keywords
This publication has 0 references indexed in Scilit: