Deposition of high quality YBa2Cu3O7−x films on ultrathin (12 μm thick) sapphire substrates for infrared detector applications

Abstract
High quality epitaxial YBa2Cu3O7−x (YBCO)thin films have been deposited on 12 μm thick (11̄02) oriented sapphire substrates using a CeO2 buffer layer. Both layers were deposited by pulsed laser deposition(PLD) using a blackbody‐type heater. The YBCOfilms showed superconductive transition temperatures of 88–89.5 K and transition widths ≤0.5 K. Structural evaluation of the films indicate that the YBCOfilms are c‐axis oriented, with the YBCO (005) peak showing a rocking angle full width half‐maximum (FWHM) of about 0.7°. The φ‐scans of the (103) YBCO peak indicate a high degree of in‐plane epitaxy with no signs of high angle grain boundaries. The high quality of these films combined with the low heat capacity of the substrates, make these structures ideal for infrared detector applications.

This publication has 0 references indexed in Scilit: