Absorption coefficient of 4H silicon carbide from 3900 to 3250 Å
- 1 September 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (5) , 2963-2964
- https://doi.org/10.1063/1.368403
Abstract
We report the values of the absorption coefficient of 4H SiC at room temperature, in the wavelength range from 3900 to 3350 Å and at 3250 Å. By using the known shift in the band gap with temperature, we also present an estimate of the absorption coefficient of 4H SiC at 2 K.This publication has 3 references indexed in Scilit:
- Ellipsometric Studies of Bulk 4H and 6H SiC SubstratesPhysica Status Solidi (a), 1998
- Static Dielectric Constant of SiCPhysical Review B, 1970
- Refractive Index and Low-Frequency Dielectric Constant of 6H SiCJournal of the Optical Society of America, 1968