Modification of quantum dot properties via surface exchange and annealing: Substrate temperature effects
- 1 May 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (3) , 1326-1329
- https://doi.org/10.1116/1.590068
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Reversible transition between InGaAs dot structure and InGaAsP flat surfaceApplied Physics Letters, 1997
- Incorporation of arsenic and phosphorus in GaxIn1−xAsyP1−y alloys grown by molecular-beam epitaxy using solid phosphorus and arsenic valved cracking cellsJournal of Applied Physics, 1996
- Effects of monolayer coverage, flux ratio, and growth rate on the island density of InAs islands on GaAsApplied Physics Letters, 1995
- Substrate temperature and monolayer coverage effects on epitaxial ordering of InAs and InGaAs islands on GaAsApplied Physics Letters, 1995