Limitation fondamentale dans les transistors MOS de puissance ; le compromis entre la résistance à l'état passant RON et la tension de claquage VDBR

1 January 1981

journal article
Published by EDP Sciences in Revue de Physique Appliquée

Vol. 16 (9) , 509-515
https://doi.org/10.1051/rphysap:01981001609050900

Abstract

The theoretical limitations of the product 2014 ON Resistance-Breakdown voltage 2014 are determined for the power MOST family. In the low voltage case (VDBR 200 V) this product is proportionnal to the channel length and to the distance between the elementary source cells. It is independent of the breakdown voltage value. In the high voltage case, this product is proportionnal to V-2.5DBR and is not affected by the geometry of the device. The state of the art for D. and V. MOS, is one third of the theoretical limits.

Keywords

BREAKDOWN VOLTAGE
HIGH VOLTAGE
LOW VOLTAGE

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