Electron and hole μτ products of slightly doped a-Ge:H films
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 137-138, 813-816
- https://doi.org/10.1016/s0022-3093(05)80244-3
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Solution of the μτ problem in a-Si: HPhilosophical Magazine Part B, 1991
- Influence of plasma deposition on structural and electronic properties of a-Ge:HJournal of Non-Crystalline Solids, 1989
- Ambipolar diffusion length measurements in hydrogenated amorphous siliconApplied Physics Letters, 1989
- Steady-state photocarrier grating technique for diffusion-length measurement in semiconductors: Theory and experimental results for amorphous silicon and semi-insulating GaAsJournal of Applied Physics, 1987
- Photoconductivity and dark conductivity of hydrogenated amorphous siliconSolid State Communications, 1983