Characterization and properties of green-emitting β-SiAlON:Eu2+ powder phosphors for white light-emitting diodes
Top Cited Papers
- 17 May 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (21) , 211905
- https://doi.org/10.1063/1.1935027
Abstract
This letter reports a β-SiAlON:Eu2+ green phosphor with the composition of Eu0.00296Si0.41395Al0.01334O0.0044N0.56528. The phosphor powder exhibits a rod-like morphology with the length of ∼4μm and the diameter of ∼0.5μm. It can be excited efficiently over a broad spectral range between 280 and 480 nm, and has an emission peak at 535 nm with a full width at half maximum of 55 nm. It has a superior color chromaticity of x=0.32 and y=0.64. The internal and external quantum efficiencies of this phosphor is 70% and 61% at λex=303nm, respectively. This newly developed green phosphor has potential applications in phosphor-converted white LEDs.Keywords
This publication has 15 references indexed in Scilit:
- Eu 2 + -doped Ca-α-SiAlON: A yellow phosphor for white light-emitting diodesApplied Physics Letters, 2004
- Red-Enhanced White-Light-Emitting Diode Using a New Red PhosphorJapanese Journal of Applied Physics, 2003
- Optical Properties of Three-Band White Light Emitting DiodesJournal of the Electrochemical Society, 2003
- Preparation and Luminescence Spectra of Calcium‐ and Rare‐Earth (R = Eu, Tb, and Pr)‐Codoped α‐SiAlON CeramicsJournal of the American Ceramic Society, 2002
- Luminescence Properties of Terbium-, Cerium-, or Europium-Doped α-Sialon MaterialsJournal of Solid State Chemistry, 2002
- Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet ChipJapanese Journal of Applied Physics, 2002
- Luminescence in Eu 2+ -doped Ba 2 Si 5 N 8 : fluorescence, thermoluminescence, and upconversionJournal of Physics and Chemistry of Solids, 2000
- Long wavelength Ce3+ emission in Y–Si–O–N materialsJournal of Alloys and Compounds, 1998
- The Blue Laser DiodePublished by Springer Nature ,1997
- Full-Color Fluorescent Display Devices Using a Near-UV Light-Emitting DiodeJapanese Journal of Applied Physics, 1996