High output power GaInAsP/InP superluminescent diode at 1.3 μm
- 24 November 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (24) , 1507-1508
- https://doi.org/10.1049/el:19881029
Abstract
We have developed a 1.3 μm superluminescent diode using revolutionary structure. A light diffusion surface is placed diagonally on the active layer within the device to suppress the lasing action. Superluminescent diode characteristics were achieved in the range 0–50°C, and the coupled power into a single-mode fibre reached 1 mW.Keywords
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