Size Fluctuation of 50 nm Periodic GaInAsP/InP Wire Structure by Electron Beam Lithography and Wet Chemical Etching
- 1 November 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (11R)
- https://doi.org/10.1143/jjap.37.5961
Abstract
We investigated a size fluctuation of 50 nm periodic wire pattern of GaInAsP/InP structure with a typical wire width of around 30 nm, which was fabricated by an electron beam lithography followed by wet chemical etching. The size fluctuation of the ZEP-520 positive resist pattern was reduced from 2.7 nm to 1.4 nm by using a corrected dose profile taking the proximity effect into account, and that of the quantum-wire structure after wet etching was reduced from 3.8 nm to 2.9 nm.Keywords
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