Growth and luminescence spectroscopy of a CuCl quantum well structure

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Abstract
A structure of the type CaF2/CuCl/CaF2, in which the confined layer is 150 Å thick, has been grown on a Si(111) surface by molecular beam epitaxy in ultrahigh vacuum. The optical properties of the CuCl film have been characterized by low-temperature photoluminescence as a function of excitation density. Striking differences in the excitonic emissions are observed between the quantum well structure and a bulk single crystal of CuCl, and are discussed in terms of film purity and thickness.

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