Diffusion of Nickel in Amorphous Silicon Dioxide and Silicon Nitride Films
- 1 October 1969
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 40 (11) , 4374-4376
- https://doi.org/10.1063/1.1657201
Abstract
Nickel‐59 radiotracer has been used to determine nickel diffusion coefficients in amorphous silicon dioxide and silicon nitride films between 1100° and 1490°K. Nickel distribution has been found to be Fickian with the calculated diffusivities obeying Arrhenius equation. Long diffusion times have been found to produce anomalous diffusivities in silicon nitride.This publication has 9 references indexed in Scilit:
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