Effects of excitation intensity on the photoluminescence near the bandgap of n-InP
- 1 September 1969
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 7 (17) , 1173-1177
- https://doi.org/10.1016/0038-1098(69)90170-7
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Radiative Recombination from Photoexcited Hot Carriers in GaAsPhysical Review Letters, 1969
- Evidence for donor-acceptor recombination in InP by time-resolved photoluminiscence spectroscopySolid State Communications, 1969
- Cathodoluminescence of n-Type GaAsJournal of Applied Physics, 1968
- Free-Carrier and Exciton Recombination Radiation in GaAsPhysical Review B, 1968
- THE LASER TRANSITION AND PHOTON ENERGY OF GaAs IN THE LIGHTLY-DOPED LIMITApplied Physics Letters, 1968
- MANY-BODY WAVELENGTH SHIFT IN A SEMICONDUCTOR LASERApplied Physics Letters, 1968
- Radiative Recombination in-Type InPPhysical Review B, 1967
- ROOM TEMPERATURE SUPER-RADIANCE RADIATION IN n-TYPE GaAs BY CONTINUOUS ELECTRON-BEAM EXCITATIONApplied Physics Letters, 1966
- Exciton Absorption and Emission in InPPhysical Review B, 1964
- A Criterion for Exciton Binding in Dense Electron—Hole Systems—Application to Line Narrowing Observed in GaAsJournal of Applied Physics, 1963