A trapping mechanism for autodoping in silicon epitaxy—I. Theory
- 1 February 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 32 (2) , 83-88
- https://doi.org/10.1109/t-ed.1985.21916
Abstract
An improved dopant incorporation model based on the trapping of surface adsorbed dopant atoms is described. The model is represented by a first-order differential equation and is characterized by three reactor-dependent parameters. The density of dopant atoms (N_{A}^{0}) adsorbed on the substrate surface just before epitaxial deposition is directly related to the modeling of autodoping, which is identified as an initial transient solution to the model equation.Keywords
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