Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer
- 1 May 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (5B) , L498
- https://doi.org/10.1143/jjap.40.l498
Abstract
We report on a visible-blind AlGaN/GaN heterobipolar phototransistor with low threading dislocation density, fabricated by organometallic vapor phase epitaxy using the low-temperature interlayer technique. The dark current at room temperature was as low as 34.6 pA/mm2 at 3 V and the responsivity was 160 A/W under 0.78 nW/cm2 illumination. The high-temperature device performance up to 200°C was marked by the exponential evolution of the dark current under the influence of a deep defect near 459 meV. Also, photoinduced transient spectroscopy between 50°C and 175°C yielded evidence of defects at about 93 meV, 137 meV and 205 meV energies, which caused a long-lasting photocurrent after weak-intensity illumination.Keywords
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