Reliability issues of InAlAs/InGaAs high-electron-mobility transistors

Publisher Website

9 December 2002

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 349-352
https://doi.org/10.1109/iciprm.1991.147388

Abstract

No abstract available

Keywords

This publication has 5 references indexed in Scilit:

Ga/sub 0.51/In/sub 0.49/P/GaAs HEMT's exhibiting good electrical performance at cryogenic temperatures
IEEE Transactions on Electron Devices, 1990
Microwave InAlAs/InGaAs/InP HEMTs: status and applications
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1990
Arsenic polyps on contacts to GaAs
IEEE Transactions on Electron Devices, 1989
Semiconductor Device Reliability
Published by Springer Nature ,1989
Kink effect in submicrometer-gate MBE-grown InAlAs/InGaAs/InAlAs heterojunction MESFETs
IEEE Electron Device Letters, 1988