A front-end for silicon pixel detectors in ALICE and LHCb
- 1 April 2001
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 461 (1-3) , 492-495
- https://doi.org/10.1016/s0168-9002(00)01281-x
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chipNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1999
- Radiation tolerant VLSI circuits in standard deep submicron CMOS technologies for the LHC experiments: practical design aspectsIEEE Transactions on Nuclear Science, 1999
- Single event effects in static and dynamic registers in a 0.25 /spl mu/m CMOS technologyIEEE Transactions on Nuclear Science, 1999
- A pixel readout chip for 10-30 MRad in standard 0.25 /spl mu/m CMOSIEEE Transactions on Nuclear Science, 1999
- Generation of Interface States by Ionizing Radiation in Very Thin MOS OxidesIEEE Transactions on Nuclear Science, 1986
- Radiation Effects in MOS Capacitors with Very Thin Oxides at 80degKIEEE Transactions on Nuclear Science, 1984