Recombination dependent characteristics of silicon P+−N−N+ epitaxial diodes
- 1 March 1972
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 15 (3) , 311-320
- https://doi.org/10.1016/0038-1101(72)90086-x
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Transient behaviour of a range of P+−N−N+ diodes with narrow centre regionsSolid-State Electronics, 1970
- Forward current—Voltage and switching characteristics of p+-n-n+(epitaxial) diodesIEEE Transactions on Electron Devices, 1969
- On Carrier Accumulation, and the Properties of Certain Semiconductor Junctions†Journal of Electronics and Control, 1958
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952