wo-dimensional finite element simulation of semiconductor devices

8 August 1974

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 10 (16) , 341-343
https://doi.org/10.1049/el:19740270

Abstract

Semiconductor-device modelling in two dimensions by the finite-element method is described. Results of application to a GaAs m.e.s.f.e.t. are given. Negative differential drain conductance is observed.

Keywords

FINITE ELEMENT ANALYSIS
SEMICONDUCTOR DEVICE MODELS
SEMICONDUCTOR DEVICES
FIELD EFFECT TRANSISTORS
SIMULATION
NEGATIVE DIFFERENTIAL DRAIN CONDUCTANCE

This publication has 1 reference indexed in Scilit:

VARIATIONAL CRIMES IN THE FINITE ELEMENT METHOD
Published by Elsevier ,1972