Analysis of the dispersive diffusion of atoms in disordered solids

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Abstract
In the theoretical analysis of dispersive transport, it is essential to take account of the actual initial conditions. In transient photoconductivity experiments, all the particles are initially in a transport state, but in those on atomic diffusion the atoms are often initially in thermal equilibrium at a temperature less than that at which the diffusion is measured. We show that the multiple-trapping model, which explains well the photoconductivity results, cannot account for those on the diffusion of H atoms in a-Si:H, for which it has often been proposed.