Adsorption of hydrocarbons on a diamond (111) surface: Anab initioquantum-mechanical study
- 15 July 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 48 (4) , 2666-2674
- https://doi.org/10.1103/physrevb.48.2666
Abstract
The adsorption of H⋅, ⋅, , CH⋅, H⋅, and on hydrogen-terminated (111) surfaces of diamond has been investigated theoretically. Ab initio molecular-orbital theory was used in order to calculate the relative adsorption energies of these different hydrocarbon species. The effects of electron correlation, included by means of second-order Mo/ller-Plesset theory, on the relative adsorption energies, as well as the choice of basis sets, were investigated. The effects of different sizes of model clusters and different geometry optimizations were also studied. Counterpoise corrections were used to estimate the magnitude of the basis-set superposition errors. The adsorption energies were found to be in the order H⋅>H⋅≊(singlet)>CH⋅>⋅(triplet)>⋅> . The H⋅ species was predicted to adsorb stronger to the H-terminated diamond (111) surface than H⋅ does. with one site binding to the surface was predicted to yield a significantly weaker adsorption than the other hydrocarbons.
Keywords
This publication has 20 references indexed in Scilit:
- Local-density-approximation-based simulations of hydrocarbon interactions with applications to diamond chemical vapor depositionPhysical Review B, 1991
- Potential energy calculations of diamond growth by methyl radicalsThe Journal of Physical Chemistry, 1991
- Empirical potential for hydrocarbons for use in simulating the chemical vapor deposition of diamond filmsPhysical Review B, 1990
- Adsorption and bonding of C1Hx and C2Hy on unreconstructed diamond(111). Dependence on coverage and coadsorbed hydrogenJournal of Materials Research, 1990
- Possible behavior of a diamond (111) surface in methane/hydrogen systemsJournal of Materials Research, 1990
- Energetics of acetylene-addition mechanism of diamond growthThe Journal of Physical Chemistry, 1988
- Growth mechanism of vapor-deposited diamondJournal of Materials Research, 1988
- The Importance of the Positively Charged Surface for the Epitaxial Growth of Diamonds at Low PressureJapanese Journal of Applied Physics, 1987
- Epitaxial growth mechanism of diamond crystal in methane-hydrogen plasmaJournal of the American Chemical Society, 1986
- Chemical evaporation and deposition of solids in a non-isothermal plasma; Chemical transport of carbonJournal of Crystal Growth, 1972