Optically pumped lasing of ZnO at room temperature
- 28 April 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (17) , 2230-2232
- https://doi.org/10.1063/1.118824
Abstract
We report the observation of optically pumped lasing in ZnO at room temperature. Thin films of ZnO were grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire substrates. Laser cavities formed by cleaving were found to lase at a threshold excitation intensity of 240 . We believe these results demonstrate the high quality of ZnO epilayers grown by molecular beam epitaxy while clearly demonstrating the viability of ZnO based light emitting devices.
Keywords
This publication has 8 references indexed in Scilit:
- Optically pumped ultraviolet lasing from ZnOPublished by Elsevier ,1999
- Cleaved cavity optically pumped InGaN–GaN laser grown on spinel substratesApplied Physics Letters, 1996
- Spectral and spatial resolution of photopumped II–VI single quantum well lasersApplied Physics Letters, 1995
- Above room temperature near ultraviolet lasing from an optically pumped GaN film grown on sapphireApplied Physics Letters, 1995
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994
- The Luminescence of ZnO under High One‐ and Two‐Quantum ExcitationPhysica Status Solidi (b), 1975
- Exciton-exciton interaction and laser emission in high-purity ZnOSolid State Communications, 1973
- ULTRAVIOLET ZnO LASER PUMPED BY AN ELECTRON BEAMApplied Physics Letters, 1966