New developments in photoconductive detectors (invited)

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Abstract
Nearly ideal for detecting ionizing radiation, wide band-gap semiconductors present a possibility of having outstanding radiation hardness, fast charge collection, and low leakage current that will allow them to be used in high radiation, high temperature, and chemically aggressive environments. Over the past few years, the improvements in the electrical quality of wide band-gap semiconductors have progressed enormously. One particular wide band-gap semiconductor, diamond, has properties that may be ideal for radiation detection. Since the discovery of low pressure and low temperature deposition of diamond, the possibility of large area diamond films has become a reality. Over the past few years, great progress has been made in advancing the electrical quality of chemical-vapor-deposited (CVD) diamond. Presently, unprecedented diamond wafer size of 7 in. diam is possible. Due to both the present electrical quality and the available size, the utilization of diamond in radiation detection applications is not just a dream but a reality. The progression of CVD diamond’s electrical properties in the last few years will be presented along with what is currently possible. Applications of CVD diamond for the National Ignition Facility (NIF) diagnostics will be reviewed. In addition, a brief review concerning other possible wide band-gap semiconductors for ICF diagnostics will be presented.

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