Two-dimensional electron gas m.e.s.f.e.t. structure
- 14 August 1980
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 16 (17) , 667-668
- https://doi.org/10.1049/el:19800473
Abstract
The first m.e.s.f.e.t. structure is reported in which the channel near pinch-off is occupied by a two-dimensional electron gas accumulated at the interface of a GaAs(N)-AlxGa1−xAs(N) heterojunction. Experimental data are in good agreement with theoretical calculations.Keywords
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- Confined carrier quantum states in ultrathin semiconductor heterostructuresPublished by Springer Nature ,2007