F.m. noise measurements on silicon IMPATT oscillators
- 28 January 1971
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 7 (2) , 39-40
- https://doi.org/10.1049/el:19710029
Abstract
The view has often been expressed that IMPATT oscillators have poor f.m. noise performance. This letter gives results of f.m. noise measurements on J band IMPATT oscillators which indicate that, with suitable cavity and diode design, good f.m. noise performance can be obtained.Keywords
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