High Temperature Reactions in the Silicon-Hydrogen-Chlorine System

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Abstract
The partial pressures of the gaseous species in equilibrium with solid silicon in the Si‐H‐Cl system are presented as a function of temperature for different Cl/H ratios and total pressures. Computations were performed using our recently determined value of . Experimental data concerning the deposition and dissolution of silicon over a temperature range of 1200°–1700°K are compared to the equilibrium data and general conclusions drawn about the probable reaction mechanisms involved, especially for decomposition of the compounds and . Particular emphasis is put on attempting to integrate the diverse body of experimental data that exists for silicon deposition from and mixtures at high temperatures.

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