Behavior of Al–Al2O3–Al single-electron transistors from 85 mK to 5 K
- 4 May 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (18) , 2268-2270
- https://doi.org/10.1063/1.121334
Abstract
Using e-beam lithography and conventional double-angle evaporation, we have fabricated Al–Al2O3–Al single-electron transistors and studied their behavior from 85 mK to about 5 K. The total island capacitance CΣ of the devices ranges from 120 to 200 aF, with typical estimated junction overlaps of about 30 nm×30 nm. At 4.2 K, our devices display well-behaved periodic I–Vg characteristics with the maximum charge-transfer function ∂I/∂Q0 ranging from 4 to 130 pA/e. The electrical characteristics of these devices agree well with the predictions of the Orthodox Theory, with current modulation being observed up to a temperature T≃e2/(2CΣkB). Below 1 K small deviations occur, which are partly due to island self-heating effects.Keywords
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