Design, fabrication, and characterization of subwavelength periodic structures for semiconductor antireflection coating in the visible domain

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Abstract
Subwavelength structured (SWS) surfaces etched directly into different substrates provide performance equivalent to an ideal anti-reflection thin film. We report on SWS surfaces etched into silicon which present anti-reflection properties for visible light. The fabrication of the SWS component is based on a double holographic exposure of photoresist and reactive ion etching processes. At normal incidence, the reflectivity for the HeNe line is 0.02. This reflectivity measurement includes a 1 percent diffusion by the surface. Measurements of the reflectivity over the whole visible spectrum and over a wide field of view are provided.

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