Residual photocurrent decay in hydrogenated amorphous silicon

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Abstract
The residual photocurrent decay following the steady photoexcitation was measured in hydrogenated amorphous silicon as a function of temperature. The data were analyzed by the Fermi level analysis first outlined by Rose [RCA Rev. 1 2, 362 (1951)]. By introducing a time‐dependent recombination rate (∼t−(1−α)), we obtained a good agreement between density of states values obtained from the photoconductivity decay and from space‐charge‐limited current measurements.