Monolithic microwave AlGaAs/InGaAs doped-channel FET switches
- 1 September 1996
- journal article
- research article
- Published by Wiley in Microwave and Optical Technology Letters
- Vol. 13 (1) , 47-49
- https://doi.org/10.1002/(sici)1098-2760(199609)13:1<47::aid-mop16>3.0.co;2-2
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As (0≤x≤0.25) doped-channel field-effect transistors (DCFET's)IEEE Transactions on Electron Devices, 1995
- Device linearity improvement by Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.2/Ga/sub 0.8/As heterostructure doped-channel FETsIEEE Electron Device Letters, 1995
- High-performance GaAs switch IC's fabricated using MESFET's with two kinds of pinch-off voltages and a symmetrical pattern configurationIEEE Journal of Solid-State Circuits, 1994