Surface-state density at the (hydrogen-chloride) oxide-silicon interface

10 August 1972

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 8 (16) , 402-404
https://doi.org/10.1049/el:19720293

Abstract

The addition of small amounts of gaseous hydrogen chloride into the dry-oxygen-gas stream during thermal oxidation has been found to reduce by one order of magnitude the surface-state density at the silicon-dioxide-silicon interface. Effects of silicon orientation, low-temperature annealing and hydrogen-chloride concentration within the oxidising atmosphere have been investigated by using the quasistatic technique.

Keywords

QUASISTATIC TECHNIQUE
SURFACE STATE DENSITY
SILICON DIOXIDE SILICON INTERFACE
THERMAL OXIDATION
HYDROGEN CHLORIDE CONCENTRATION
SILICON ORIENTATION EFFECTS
LOW TEMPERATURE ANNEALING

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