Applications of ZnO in Cu(In,Ga)Se/sub 2/ solar cells
- 1 January 1996
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01608371,p. 825-828
- https://doi.org/10.1109/pvsc.1996.564255
Abstract
The influence of preparation conditions of the transparent conductive oxide (TCO) ZnO in a magnetron sputtering process on the properties of solar cells based on Cu(In,Ga)Se/sub 2/ absorbers is examined. Criteria for optimized ZnO layers for high efficiency applications are given. Preparing at substrate temperatures below 200/spl deg/C, the sputtering conditions have only a minor effect on the device properties. A novel high rate reactive DC-sputtering process has been developed leading to highly transmissive conductive ZnO layers with no additional substrate heating. TCO layers suitable for module applications have been deposited in less than 5 minutes. Solar cell device properties using ZnO prepared with this process are comparable to cells with standard RF-sputtered ZnO. This demonstrates the possibility to apply a scalable high deposition rate ZnO process to high efficient Cu(In,Ga)Se/sub 2/ solar cells. A significant cost reduction for large area applications is expected with this novel process.Keywords
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