Epitaxial iridium silicide formation during deposition of Ir on Si(100) at high temperature under ultrahigh vacuum
- 1 August 1994
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (3) , 1937-1939
- https://doi.org/10.1063/1.357681
Abstract
The iridium silicide formation has been examined by depositing Ir on Si(100) at different substrate temperatures under ultrahigh vacuum. An epitaxial Ir3Si4 film was formed when an Ir film of 100 Å was directly deposited on Si(100) at 475 °C and annealed at the same temperature for 1.5 h. The Ir3Si4 was not observed in the conventional annealing process at 475 °C. In contrast, a polycrystalline IrSi film was formed after deposition of an Ir film of 100 Å on Si(100) at room temperature and followed by annealing at 475 °C for 1.5 h under ultrahigh vacuum. Formation of the epitaxial Ir3Si4 on Si(100) is attributed to the interfacial energy of the Ir3Si4/Si(100) interface.This publication has 11 references indexed in Scilit:
- Microstructural and electrical properties of epitaxial PtSi/p-Si(100) co-deposited under ultrahigh vacuumJournal of Applied Physics, 1993
- Epitaxy of metal silicidesThin Solid Films, 1990
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiEpitaxial StructuresPhysical Review Letters, 1983
- Epitaxial silicidesThin Solid Films, 1982
- Growth of single-crystal CoSi2 on Si(111)Applied Physics Letters, 1982
- Silicon/metal silicide heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1980
- Interfacial order in epitaxial NiSi2Applied Physics Letters, 1980
- Formation of iridium silicides from Ir thin films on Si substratesJournal of Applied Physics, 1979
- Crystallography of PtSi films on (001) siliconJournal of Applied Physics, 1978