The reversal of drifting excess carriers in an amorphous silicon junction
- 1 June 1983
- journal article
- letter
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 47 (6) , L107-L112
- https://doi.org/10.1080/01418638308228272
Abstract
The ‘crucial’ experiment recently described by Silver et al. in which the electric field applied to an a-Si junction was reversed during the drift of a pulse of excess electrons has been repeated. It is demonstrated that, contrary to the previous results, reversal leads to an electron flow in the opposite direction. Furthermore, the charge in the reversed signal is equal to that displaced in the original drift pulse up to the time of reversal, provided that the latter lies within the transit time. It is concluded that the interpretation of Silver et al. cannot be upheld and that the pulses normally observed in drift mobility experiments on a-Si represent the transit of excess carriers.Keywords
This publication has 2 references indexed in Scilit:
- Chemical potential in viscous phases under non-hydrostatic stressPhilosophical Magazine A, 1983
- The interpretation of drift mobility experiments on amorphous siliconPhilosophical Magazine Part B, 1983