Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11-20) Face
- 1 September 2003
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 433-436, 613-616
- https://doi.org/10.4028/www.scientific.net/msf.433-436.613
Abstract
No abstract availableKeywords
This publication has 0 references indexed in Scilit: