INTERFACE STATES RESULTING FROM A HOLE FLUX INCIDENT ON ON THE SiO2/Si INTERFACE
- 1 January 1978
- book chapter
- Published by Elsevier
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Chemical and Structural Aspects of the Irradiation Behavior of SiO2 Films on SiliconIEEE Transactions on Nuclear Science, 1977
- Negative bias stress of MOS devices at high electric fields and degradation of MNOS devicesJournal of Applied Physics, 1977
- Field- and Time-Dependent Radiation Effects at the SiO2/Si Interface of Hardened MOS CapacitorsIEEE Transactions on Nuclear Science, 1977
- Comparison of interface-state buildup in MOS capacitors subjected to penetrating and nonpenetrating radiationApplied Physics Letters, 1976
- Dependence of Interface-State Buildup on Hole Generation and Transport in Irradiated MOS CapacitorsIEEE Transactions on Nuclear Science, 1976
- Origin of Interface States and Oxide Charges Generated by Ionizing RadiationIEEE Transactions on Nuclear Science, 1976
- Electron−hole pair creation energy in SiO2Applied Physics Letters, 1975
- Electrochemical Charging of Thermal SiO2 Films by Injected Electron CurrentsJournal of Applied Physics, 1971