The effect of diode parameters on GaAs diode mixers in the 40–400 GHz range

1 January 1982

journal article
Published by Institution of Engineering and Technology (IET) in IEE Proceedings H Microwaves, Optics and Antennas

Vol. 129 (3) , 99-102
https://doi.org/10.1049/ip-h-1.1982.0022

Abstract

Experimental measurements of noise temperature T_m and minimum conversion loss L_min of a single-sideband Schottky-barrier diode mixer show the dependence: T_n = T_n0 (1 + f²/f²₀) and (L_min0 − 1) = (L_min0 − 1) (1 + f²/f²₀), where f₀ = 110 GHz. It is demonstrated that these results can be interpreted in terms of the effect of diode parameters on the mixing process.

Keywords

SCHOTTKY-BARRIER DIODE MIXER
MINIMUM CONVERSION LOSS
SINGLE-SIDEBAND
40 GHZ TO 400 GHZ
Q-BAND
MM-WAVES
DIODE PARAMETERS
NOISE TEMPERATURE
GAAS
III-V SEMICONDUCTORS
V-BAND