High-resolution electron energy loss as a probe of the Si-Al Schottky-barrier formation process
- 15 August 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 32 (4) , 2693-2695
- https://doi.org/10.1103/physrevb.32.2693
Abstract
New experimental results reveal no evidence of a metallic character of Si(111)7×7 with submonolayer Al coverages. This requires a revision of the current ideas about the Si-Al Schottky-barrier formation process. The metallic character appears at coverages above one monolayer.Keywords
This publication has 19 references indexed in Scilit:
- Synchrotron Radiation Photoemission Spectroscopy of Semiconductor Surfaces and InterfacesAnnual Review of Materials Science, 1984
- Microscopic investigations of semiconductor interfacesSolid-State Electronics, 1983
- The structure and properties of metal-semiconductor interfacesSurface Science Reports, 1982
- Initial Adsorption State for Al on GaAs(110) and Its Role in the Schottky Barrier FormationPhysical Review Letters, 1982
- Surface reconstruction and interface formation in Si and GaAsJournal of Vacuum Science and Technology, 1981
- Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface StatesPhysical Review Letters, 1980
- Synchrotron radiation photoemission spectroscopy of III-VI compoundsPhysical Review B, 1977
- Electron energy loss spectroscopy of the Si(111)—simple-metal interfacePhysical Review B, 1977
- Metal-Induced Surface States during Schottky-Barrier Formation on Si, Ge, and GaAsPhysical Review Letters, 1975
- Optical absorption of surface states at Si(111) 7 × 7Surface Science, 1975