7.4 Gbit/s monolithically integrated GaAs/AlGaAs laser diode-laser driver structure
- 16 September 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (19) , 1694-1696
- https://doi.org/10.1049/el:19931127
Abstract
A molecular beam epitaxy (MBE) grown (GaAs/AlGaAs multi-quantum well laser, monolithically integrated with a laser driver, was realised on 2 inch GaAs substrate wafers. In an optical data communication setup, performance up to data rates of 7.4 Gbit/s was demonstrated.Keywords
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