Impurity Absorption Spectroscopy in: The Importance of Inhomogeneous Isotope Broadening
- 8 May 2003
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 90 (18) , 186402
- https://doi.org/10.1103/physrevlett.90.186402
Abstract
We report high-resolution infrared absorption spectra of the neutral donors phosphorus and lithium, and the neutral acceptor boron, in isotopically pure crystals. Surprisingly, many of the transitions are much sharper than previously reported in natural Si. In particular, the line of phosphorus in has a full width at half maximum of only , about 5 times less than the narrowest line previously reported for natural Si, making it the narrowest shallow impurity transition yet observed. The widely held assumptions that the impurity transitions previously reported in high quality samples of natural Si revealed the true, homogeneous linewidths, are thus shown to be incorrect. The sharper transitions in also reveal new substructures in the boron and lithium spectra.
Keywords
This publication has 18 references indexed in Scilit:
- “Intrinsic” Acceptor Ground State Splitting in Silicon: An Isotopic EffectPhysical Review Letters, 2002
- Photoluminescence of Isotopically Purified Silicon: How Sharp are Bound Exciton Transitions?Physical Review Letters, 2001
- Study of the fundamental linewidths of 1S→nPdonor transitions in ultrapure germaniumPhysical Review B, 1988
- New experimental information from photoluminescence studies about the limiting line-broadening mechanics for donor states in SISolid State Communications, 1982
- Spectroscopy of the solid-state analogues of the hydrogen atom: donors and acceptors in semiconductorsReports on Progress in Physics, 1981
- Linewidths of the electronic excitation spectra of donors in siliconPhysical Review B, 1981
- High resolution study of the group V impurities absorption in siliconSolid State Communications, 1979
- A high resolution study of the excitation spectrum of phosphorus donors introduced in silicon by neutron transmutationSolid State Communications, 1979
- Phonon Broadening of Impurity LinesPhysical Review B, 1960
- Broadening of Impurity Levels in SiliconPhysical Review B, 1955