A novel self-aligned surface-silicide passivation technology for reliability enhancement in copper interconnects
- 19 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Electromigration characteristics of copper interconnectsIEEE Electron Device Letters, 1993
- Evaluating the Large Electromigration Resistance of Copper Interconnects Employing a Newly Developed Accelerated Life‐Test MethodJournal of the Electrochemical Society, 1993
- Electrical Properties of Giant‐Grain Copper Thin Films Formed by a Low Kinetic Energy Particle ProcessJournal of the Electrochemical Society, 1992