Resistance Change of Single Crystals of Bismuth in a Longitudinal Magnetic Field

Resistance change of single crystal Bi as a function of magnetic field intensity.—Bismuth crystals of various orientations (angle between vertical crystallographic axis and length of specimen) show an increase in resistance in a magnetic field parallel to the specimen length. The fractional change in resistance $\frac{\Delta r}{r}$ is shown to be proportional to a power, slightly less than two, of the field intensity. In a maximum field of about 3500 gauss and at room temperature the increases in resistance range from 2 to 9 percent.