Very low threshold lasing in Er 3+ dopedZBLAN microsphere
- 30 September 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (20) , 1745-1746
- https://doi.org/10.1049/el:19991009
Abstract
A green room temperature up-conversion laser has been demonstrated in a 120 µm diameter microsphere of Er3+ doped ZBLAN. Lasing occurs around 540 nm with a 801 nm diode laser pump. The lasing threshold of only 30 µW of absorbed power is over two orders of magnitude lower than the lowest previously observed.Keywords
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