Electrical properties of AgGaSe₂ epitaxial layers

Publisher Website

1 January 1983

journal article
research article
Published by Wiley in Crystal Research and Technology

Vol. 18 (4) , 477-481
https://doi.org/10.1002/crat.2170180408

Abstract

No abstract available

Keywords

This publication has 14 references indexed in Scilit:

Hole Effective Masses in CuInSe₂
Physica Status Solidi (b), 1981
Impurity States in CuInSe₂
Crystal Research and Technology, 1981
Adamantine ternary epitaxial layers
Progress in Crystal Growth and Characterization, 1980
Structural and electrical properties of CuInSe2 epitaxial layers prepared by single-source evaporation
Thin Solid Films, 1980
Two-photon absorption and short pulse stimulated recombination in AgGaSe2
Optics Communications, 1980
Growth and electrical properties of epitaxial CuInS₂ thin films on GaAs substrates
Crystal Research and Technology, 1979
Epitaxial layers of CuInSe2 on GaAs
Thin Solid Films, 1978
Growth and characterization of AgGaSe2 crystals
Journal of Crystal Growth, 1977
Electrical and optical properties of AgInS2
Solid-State Electronics, 1976
Optical and Electrical Properties of AgGa $S_{2}$ and AgGa ${Se}_{2}$
Physical Review B, 1971