Effect of the electron-phonon interaction on the subband structure of inversion layers in compound semiconductors
- 31 August 1980
- journal article
- Published by Elsevier in Surface Science
- Vol. 98 (1-3) , 589-596
- https://doi.org/10.1016/0039-6028(80)90538-5
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Many-body effects in-type Si inversion layers. II. Excitations to higher subbandsPhysical Review B, 1977
- Magnetoconductance Oscillations of-Type Inversion Layers in InSb SurfacesPhysical Review B, 1972
- The effects of electron-electron interaction on the properties of metalsAnnals of Physics, 1965