A convergence scheme for over-erased flash EEPROM's using substrate-bias-enhanced hot electron injection
- 1 November 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 16 (11) , 500-502
- https://doi.org/10.1109/55.468280
Abstract
A novel convergence scheme using substrate-bias-enhanced hot electron injection is proposed to tighten the cell threshold voltage distribution after erasure for stacked gate flash EEPROM's. By lowering the drain voltage and increasing the magnitude of the negative substrate bias voltage, the substrate current is reduced but the hot electron gate current is enhanced significantly, and the convergence time is shown to be more than a hundred times shorter than the previous scheme. With the convergence operation performed near the ON-OFF transition region of the cells, the total drain current for all the converged cells is reduced and low power consumption is achieved.<>Keywords
This publication has 3 references indexed in Scilit:
- Failure mechanisms of flash cell in program/erase cyclingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A self-convergence erasing scheme for a simple stacked gate flash EEPROMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- VIPMOS-a novel buried injector structure for EPROM applicationsIEEE Transactions on Electron Devices, 1991