Sensor fabrication using thin film-on-silicon approaches
- 11 March 1997
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 296 (1-2) , 157-163
- https://doi.org/10.1016/s0040-6090(96)09338-8
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Optical absorption and electronic transport in ion-implantation-doped polycrystalline SiC filmsApplied Physics A, 1995
- The kinetics of formation of gas-sensitive RGTO-SnO2 filmsThin Solid Films, 1995
- The physics of macroporous silicon formationThin Solid Films, 1995
- Structural and electronic characterization of β-SiC films on Si grown from mono-methylsilane precursorsMaterials Science and Engineering: B, 1995
- SiC for sensors and high-temperature electronicsSensors and Actuators A: Physical, 1994
- Optical pressure sensor based on a Mach-Zehnder interferometer integrated with a lateral a-Si:H p-i-n photodiodeIEEE Photonics Technology Letters, 1993
- Colour detection using amorphous semiconductor thin-film alloysSensors and Actuators A: Physical, 1993
- Properties of silicon-electrolyte junctions and their application to silicon characterizationApplied Physics A, 1991
- Anisotropic Etching of Crystalline Silicon in Alkaline Solutions: I . Orientation Dependence and Behavior of Passivation LayersJournal of the Electrochemical Society, 1990