Measurements of the gain spectrum of near-travelling-wave and Fabry-Perot semiconductor optical amplifiers at 1.5 µm
- 1 January 1986
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 60 (1) , 113-121
- https://doi.org/10.1080/00207218608920766
Abstract
We discuss the relationship between facet reflectivity and gain bandwidth in semiconductor optical amplifiers and present the first high-resolution measurements of the gain spectrum of InGaAsP 1 · 5 µ optical amplifiers. The relatively smooth gain spectrum and high output power of near-travelling-wave amplifiers are compared with those of Fabry-Perot amplifiers.Keywords
This publication has 16 references indexed in Scilit:
- ASK heterodyne receiver sensitivity measurements with two in-line 1.5 μm optical amplifiersElectronics Letters, 1985
- Tilted-mirror semiconductor lasersApplied Physics Letters, 1985
- Low-reflectivity semiconductor laser amplifier with 20 dB fibre-to-fibre gain at 1500 nmElectronics Letters, 1985
- Theoretical Design of Single-Layer Antireflection Coatings on Laser FacetsAT&T Bell Laboratories Technical Journal, 1984
- Low threshold ridge waveguide laser at 1.55 μmElectronics Letters, 1983
- Fabry-Perot cavity type 1.5 μm InGaAsP BH-laser amplifier with small optical-mode confinementElectronics Letters, 1983
- Semiconductor Laser Amplifier for Single Mode Optical Fiber CommunicationsJournal of Optical Communications, 1983
- Internal loss of InGaAsP/InP buried crescent (λ = 1.3 μm) laserApplied Physics Letters, 1982
- S/N performance of an AlGaAs laser preamplifier and a linear repeater systemElectronics Letters, 1982
- Noise and error rate performance of semiconductor laser amplifiers in PCM-IM optical transmission systemsIEEE Journal of Quantum Electronics, 1980